| PART |
Description |
Maker |
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
| AS8ER128K32Q-250/XT AS8ER128K32Q-250/IT AS8ER128K3 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
|
Austin Semiconductor
|
| AS58C1001DG-15_883C AS58C1001DG-15_IT AS58C1001DG- |
128K x 8 EEPROM EEPROM Memory
|
Austin Semiconductor
|
| X28C010FI-20 X28C010FMB-15C7808 X28C010FMB-15C7619 |
CAP 6.8PF 100V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
Controller IC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Controller IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 120 ns, CDIP32
CAP 6.8PF 100V .25 PF NP0(C0G) SMD-0603 TR-13 PLATED-NI/SN 128K X 8 EEPROM 5V, 250 ns, CDFP32
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 250 ns, CPGA36
5 Volt, Byte Alterable EEPROM 128K X 8 EEPROM 5V, 200 ns, CDSO32
|
Intersil Corporation
PROM
Intersil, Corp.
|
| SA24C1024 |
1Mb, 128K x 8-bit memory; IIC serial EEPROM memory device
|
Saifun Semiconductors
|
| AT17LV002A AT17LV010A AT17LV128A AT17LV256A AT17LV |
2M-bit Configuration EEPROM (5V and 3.3V), Altera Pinout.
1M-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
128K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
256K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
512K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
65K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
FPGA configuration EEPROM memory. Memory size 2-Mbit.
FPGA configuration EEPROM memory. Memory size 1-Mbit.
|
Atmel
|
| CAT24WC129WI-3TE13 CAT24WC129XA-3TE13 CAT24WC129PA |
128K-Bit I2C Serial CMOS EEPROM 128K的位I2C串行CMOS EEPROM
|
Rochester Electronics, LLC
Atmel, Corp.
Ecliptek, Corp.
KOA Speer Electronics,Inc.
NXP Semiconductors N.V.
|
| HN58X24512FPIE |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 512k EEPROM (64-kword × 8-bit)
|
Renesas Electronics Corporation
|
| AS8E128K32Q-15IT |
128K x 32 EEPROM radiation tolerant memory array
|
Austin Semiconductor
|
| MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32
128K X 8 EEPROM 12V, 150 ns, PDSO32
128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| LE24CB1283 |
Two Wire Serial Interface EEPROM (128K EEPROM)
|
Sanyo Semicon Device
|
